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STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmeshTM II Power MOSFET
Features
Type STD10NM60N STF10NM60N STP10NM60N STU10NM60N

VDSS 600 V 600 V 600 V 600 V
RDS(on) max < 0.55 < 0.55 < 0.55 < 0.55
ID 8A 8A 8A 8A
Pw 70 W 25 W 70 W 70 W
3 2 1
1 3
3 1 2
1
3 2
TO-220
TO-220FP
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
IPAK
DPAK
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
This second generation of MDmeshTM technology, applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
Table 1.
Device summary
Marking 10NM60N 10NM60N 10NM60N 10NM60N Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube
Order code STD10NM60N STF10NM60N STP10NM60N STU10NM60N
June 2009
Doc ID 15764 Rev 1
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Contents
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 4 5 6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VGS ID ID IDM
(2)
Absolute maximum ratings
Value Parameter TO-220 TO-220FP IPAK DPAK Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Operating junction temperature Storage temperature 8 5 32 70 8 25
(1)
Unit V 8 5 32 70 15 2500 A A A W V/ns V
5 (1) 32
(1)
PTOT dv/dt
(3)
25
VISO TJ Tstg
-55 to 150
C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 8 A, di/dt 400 A/s, peak VDS V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Rthj-pcb TJ
Thermal data
Value Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 300 TO-220 TO-220FP IPAK DPAK 1.79 62.50 5 100 50 1.79 Unit C/W C/W C/W C/W
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) Value 4 200 Unit A mJ
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Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2
Electrical characteristics
(Tcase =25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 600 1 10 100 2 3 0.53 4 0.55 Typ. Max. Unit V A A nA V
VDS = max rating Zero gate voltage drain current (VGS = 0) VDS = max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V; VDS=0
Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 4 A
Table 6.
Symbol Ciss Coss Crss Co(tr)(1) Rg Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 540 44 1.2 Max. Unit pF pF pF
VDS = 50 V, f = 1 MHz, VGS = 0
-
-
VDS = 0 to 480 V, VGS = 0 f=1 MHz open drain VDD = 480 V, ID = 8 A, VGS = 10 V (see Figure 18)
-
110 6 19 3 10
-
pF nC nC nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 4 A, RG = 4.7 , VGS = 10 V (see Figure 17) Min. Typ. 10 12 32 15 Max Unit ns ns ns ns
-
-
Table 8.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, VGS = 0 ISD = 8 A, di/dt = 100 A/s VDD= 60 V (see Figure 19) ISD = 8 A, di/dt = 100 A/s VDD= 60 V TJ = 150 C (see Figure 19) Test conditions Min. Typ. Max 250 2.12 17 315 2.6 16.5 8 32 1.3 Unit A A V ns C A ns C A
VSD (2) trr Qrr IRRM trr Qrr IRRM
-
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
2.1
Figure 2.
ID (A)
Electrical characteristics (curves)
Safe operating area for TO-220
AM03944v1
Figure 3.
Thermal impedance for TO-220
1s 10
O Li per m at ite io d ni by n m this ax a R rea
D S( on )
is
10s 100s 1ms 10ms Tj=150C Tc=25C Sinlge pulse
1
0.1
0.01 0.1
1
10
100
VDS(V)
Figure 4.
ID (A)
Safe operating area for TO-220FP
AM03945v1
Figure 5.
Thermal impedance for TO-220FP
is
10
O Li per m at ite io d ni by n m this ax a R rea
D
S(
on
10s 100s 1ms 10ms Tj=150C Tc=25C Sinlge pulse
1
0.1
0.01 0.1
)
1
10
100
VDS(V)
Figure 6.
ID (A)
Safe operating area for DPAK, IPAK Figure 7.
AM03944v1
Thermal impedance for DPAK, IPAK
1s 10
O Li per m at ite io d ni by n m this ax a R rea is
10s
)
on
100s 1ms 10ms Tj=150C Tc=25C Sinlge pulse
1
0.1
0.01 0.1
D
S(
1
10
100
VDS(V)
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 8.
ID (A) 14 12 10 8 6 5V 4 2 4V 0 0 5 10 15 20 25 30 VDS(V) 0 0 2 4 4 2
Electrical characteristics Transfer characteristics
AM03948v1
Output characteristics
AM03947v1
Figure 9.
ID (A) 14 6V 12 10 8 6
VGS=10V
6
8
10
VGS(V)
Figure 10.
BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95
Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance
AM03955v1
RDS(on) () 0.56
AM00891v1
ID=1mA
0.52
0.48
VGS=10V
0.44
0.93 -50 -25
0
25
50
75 100
TJ(C)
0.40 0
2
4
6
8
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
VGS (V) 12 10 8 100 6 4 2 0 0 5 10 15 20 Qg(nC) 1 0.1 1 10 100 Coss 10 Crss VDS(V) VDS
AM03951v1
VDD=480V ID=4A
VGS
C (pF)
AM03952v1
1000 Ciss
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Electrical characteristics Figure 14.
VGS(th) (norm) 1.10
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature
AM03953v1
ID=250A
RDS(on) (norm) 2.1 1.9 ID=4A VGS=10V
AM03954v1
1.00
1.7 1.5
0.90
1.3 1.1
0.80
0.9 0.7
0.70 -50 -25
0
25
50
75 100
TJ(C)
0.5 -50 -25
0
25
50
75 100
TJ(C)
Figure 16. Source-drain diode forward characteristics
VSD (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 ISD(A) TJ=25C TJ=150C
AM03956v1
TJ=-50C
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Test circuits
3
Test circuits
Figure 18. Gate charge test circuit
VDD 12V
2200
Figure 17. Switching times test circuit for resistive load
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 21. Unclamped inductive waveform
V(BR)DSS VD
Figure 22. Switching time waveform
ton tdon tr toff tdoff tf
90% IDM
90% 10%
ID VDD VDD
0
10%
VDS 90%
VGS
AM01472v1
0
10%
AM01473v1
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Package mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package mechanical data
TO-252 (DPAK) mechanical data
DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
TO-220FP mechanical data mm Dim. Min.
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2
Typ.
Max.
4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4
L7 E A
B Dia L6 L5 F1 F2 F D
H G1
G
L2 L 3
L4 7012510_Rev_J
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
TO-251 (IPAK) mechanical data
mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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Revision history
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
6
Revision history
Table 9.
Date 10-Jun-2009
Document revision history
Revision 1 First release Changes
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